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SUM110P08-11
Vishay Siliconix
P-Channel 80-V (D-S) MOSFET
PRODUCT SUMMARY
V DS (V) r DS(on) ( Ω )
- 80 0.0111 at V GS = - 10 V
I D (A) b
- 110
Q g (Typ)
113 nC
FEATURES
? TrenchFET ? Power MOSFET
RoHS
COMPLIANT
TO-263
Drain Connected to Tab
G
S
G
D
S
Top View
Ordering Information: SUM110P08-11 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
D
P-Channel MOSFET
Parameter
Drain-Source Voltage
Gate-Source Voltage
T C = 25 °C
Symbol
V DS
V GS
Limit
- 80
± 20
110 a
Unit
V
Continuous Drain Current (T J = 150 °C)
T C = 125 °C
T A = 25 °C
I D
71
23.5 b, c
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
T A = 125 °C
T C = 25 °C
T A = 25 °C
L = 0.1 mH
I DM
I S
I AS
E AS
13.6 b, c
- 120
110 a
- 9 b, c
- 75
281
A
mJ
T C = 25 °C
375
Maximum Power Dissipation
T C = 125 °C
T A = 25 °C
P D
125
13.6 b, c
W
T A = 125 °C
4.5 b, c
Operating Junction and Storage Temperature Range
T J , T stg
- 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
b, d
Maximum Junction-to-Case (Drain)
t ≤ 10 sec
Steady State
R thJA
R thJC
8
0.33
11
0.4
°C/W
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 sec.
d. Maximum under Steady State conditions is °C/W.
Document Number: 73472
S-70309-Rev. B, 12-Feb-07
www.vishay.com
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